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Ion Beam Assisted Deposition Evaporation Optical Coater
Ion Beam Assisted Deposition Evaporation Optical Coater

Ion Beam Etching Machine

Ion beam etching (IBE) is a thin film technique that utilizes an ion source to carry out material removal processes on a substrate. IBE is a type of ion beam sputtering and, whether it's used for pre-clean or patterned etching, it helps ensure excellent adhesion and precise formation of 3D structures.
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Ion Beam Etching Machine

Description

This machine is a highly collimated, high-precision, and highly reliable nanoscale physical etching equipment solution.

Supports nanowire width accuracy and multi-type-high aspect ratio pattern etching, not limited by material type, high collimation etching, high etching rate, and good repeatability.

Application

Planar gratings, large area special gratings, DOE diffraction components, MEMS devices, thin film circuits, photonic integrated devices

Features
  • The core component ion source is independently controllable.
  • Compatible with IBE and RIBE, with optional working modes.
  • Suitable for high-precision etching of various materials, with a line width size of up to 20nm.
  • Good process capability and production reliability.
  • The bottom and side walls of SiO/Si grating are straight.
  • Allows beam energy and ion flux to be independently controlled.
  • The process takes place in a low-pressure working environment.
  • Produces controlled anisotropic etching.
  • Provides means for all known materials to be etched.
  • Allows angled profile control thanks to a variable etch beam angle relative to the sample/mask surface.
  • Allows profile/sidewall control and feature shaping.
  • Reactive gas capabilities enable higher etching rates and higher selectivity etching of various materials through reactive species.
Technical Parameters

Etchable substrate size

6 inches

Etching uniformity

±5%

Etchable material

SiO2, SiNx, Sapphire, diamond, lithium niobate, metal oxide, etc.

Available gases

N2, O2, Ar, Fluorine based or mixed gas

RF Ion source

FR power: 1KW, Ion beam energy: 1000eV, Ion beam current: 1000mA

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